Features
- IGBT MODULE
- MOS input (voltage controlled)
- N channel, Homogeneous Si
- Low inductance case
- Very low tail current with low temperature
- dependence
- High short circuit capability, self limiting to
- 6 Icnom
- Latch-up free
- Fast & soft inverse CAL diodes
- Isolated copper baseplate using DCB Direct
- Copper Bonding Technology
- Large clearance ( 12 mm ) and creepage
- distances ( 20 mm )
Aplications
- Applications
- Switching, not for linear use
- AC-inverter drive
Semikron IGBT
Semikron
SKM300GB123DH6
IGBT
SKM300GB123DH6
Referencias Específicas
- Nº Pieza fabricante (NPM)
- SKM300GB123DH6