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SKM200GB123D
107,63 $
Nessuna tassa
SKM200GB123D
Política de seguridad
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Política de entrega
(Envíos de 1-2 días hábiles para productos de stock)
Features
- TRENCH IGBT MODULE
- MOS input (voltage controlled)
- N channel, homogeneous Si
- Low inductance case
- Very low tail current with low temperature dependence
- High short circuit capability, self limiting to 6 x Icnom
- Latch-up free
- Fast & soft inverse CAL diodes
- DCB Direct Copper Bonding Technology
- Large clearance (13 mm) and creepage distances (20 mm)
Aplications
- Applications
- Switching (not for linear use)
Semikron IGBTs
Semikron
SKM200GB123D
IGBT 200A 1200V DUAL ; Type; Dual
Vces; 1200 Volts DC
Ic; 180 Amps
Vges +/-; 20
Ices Max; 0.3 MilliAmps
Vge(th) Min/Max; 4.5~6.5 Volts
Vce(sat) Max; 3 Volts
Height (mm); 30.5
Width (mm); 106.4
Depth (mm); 61.4
RoHS; Yes ;
SKM200GB123D
Riferimenti Specifici
- MPN
- SKM200GB123D
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