- Non disponibile
SKM200GAL123DKLD110
328,13 $
Nessuna tassa
SKM200GAL123DKLD110
Política de seguridad
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Política de entrega
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Features
- IGBT MODULE
- MOS input (voltage controlled)
- N channel, Homogeneous Si
- Low inductance case
- Very low tail current with low temperature dependende
- High short circuit capability, self limiting to 6 Icnom
- Latch-up free
- Fast & soft inverse CAL diodes
- Isolated copper baseplate using DCB Direct Copper Bonding Technology
- Large clearance (13mm) and creepage distances (20 mm)
Aplications
- Applications
- Switching ( not for linear use )
SKM200GAL123DKLD110
Riferimenti Specifici
- MPN
- SKM200GAL123DKLD110
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