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SKM150GB124D

91,88 $
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MODULOS THYRISTOR THYRISTOR

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DatasheetSKM150GB124D

150A/1200V/2U

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Non disponibile

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Features

  • Low Loss IGBT MODULE
  • MOS input (voltage controlled)
  • N channel, homogeneous Silicon
  • structure NPT-IGBT )
  • Low inductance case
  • Very low tail current with low temperature dependence
  • High short circuit capability, self limiting to 6 x Icnom
  • Latch-up free
  • Fast & soft inverse CAL diodes
  • Isolated copper baseplate using DCB Direct Copper Bonding Technology
  • Large clearance ( 12 mm ) and creepage distances ( 20 mm )

Aplications

  • Applications
  • Switching (not for linear use)
  • AC inverter drives

Semikron IGBTs

Semikron

SKM150GB124D

IGBT 150A 1200V DUAL LOW LOSS ; Type; Dual

Vces; 1200 Volts DC

Ic; 150 Amps

Vges +/-; 20

Ices Max; 0.3 MilliAmps

Vge(th) Min/Max; 4.5~6.5 Volts

Vce(sat) Max; 2.45 Volts

Height (mm); 30.5

Width (mm); 106.4

Depth (mm); 61.4

RoHS; Yes ;

SKM150GB124D

Riferimenti Specifici

MPN
SKM150GB124D
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