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SKM100GAY173D
94,50 $
Nessuna tassa
SKM100GAY173D
Política de seguridad
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Política de entrega
(Envíos de 1-2 días hábiles para productos de stock)
Features
- IGBT MODULE
- N channel, Homogeneous Silicon structure (NPT-IGBT)
- Very low tail current with low temperature dependence
- High short circuit capability, self limiting to 6 ICNOM
- Latch-up free
- Fast & soft inverse CAL diodes
- Isolated copper baseplate using DCB Direct Copper Bonding
- Large clearance ( 10 mm ) and creepage distances ( 20 mm )
Aplications
- Applications
- Bidirectional switches as reverse blocking IGBT
- Regenerative Branking
- Quasi resonant inverters
- DC bus voltage 750 - 1200 VDC
- Public transport (auxiliary syst.)
- Switching (not for linear use)
SKM100GAY173D
Riferimenti Specifici
- MPN
- SKM100GAY173D
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