- Non disponibile
IRFB4229
7,88 $
Nessuna tassa
IRFB4229
Política de seguridad
(Los productos cuentan con garantía limitada, por favor revisa nuestras condiciones)
Política de entrega
(Envíos de 1-2 días hábiles para productos de stock)
Features
- HEXFET Power MOSFET
- Advanced process Technologt
- Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications
- Low Epulse Rating to Reduce Power Dissipation in PDP Sustain, Energy recovery and Pass Switch Applications
- Low QG for Fast Responce
- High Repetitive Peak Current Capability for Reliable Operation
- Short Fall & Rise Times for Fast Switching
- 175 C Operating Juntion Temperature for Improved Ruggedness
- Repetitive Avalanche Capability for Robustness and Reliability
- Class-D Audio Amplifier 300W-500W (Half-bridge)
Aplications
- Semiconductors High Power Equipment Repair
IRFB4229
Riferimenti Specifici
- MPN
- IRFB4229
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