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SKM50GB123D

78,75 $
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MODULO THYRISTOR DIODO

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DatasheetSKM50GB123D

40A/1200V/2U

No identificado

Quantité
Rupture de stock

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Features

  • IGBT MODULE
  • MOS input (voltage controlled
  • Low inductance case
  • Low tail current with low temperature dependence
  • High short circuit capability, self
  • limiting to 6 x ICNOM
  • Fast and soft CAL diodes
  • Isolated copper base plate using DCB(Direct Copper Bonding Technology)

Aplications

  • Applications
  • AC inverter drives
  • Power supplies

Semikron IGBTs, SKM50 Series

Semikron

SKM50GB123D

IGBT 50A 1200V DUAL ; Type; Dual

Vces; 1200 Volts DC

Ic; 40 Amps

Vges +/-; 20

Ices Max; 0.3 MilliAmps

Vge(th) Min/Max; 4.5~6.5 Volts

Vce(sat) Max; 3 Volts

Height (mm); 30.5

Width (mm); 94

Depth (mm); 34

RoHS; Yes ;

SKM50GB123D

Références spécifiques

MPN
SKM50GB123D
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