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MIG20J503H
39,38 $
Aucune taxe
MIG20J503H
Política de seguridad
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Política de entrega
(Envíos de 1-2 días hábiles para productos de stock)
Features
- INTELLIGENT POWER MODULE
- The 4th generation trench gate thin wafer
- NPT IGBT is adopted
- FRD is built in
- The level shift circuit by high voltage IC is
- built in
- The simplification of a high side driver power
- is possible by the bootstrap system
- Short circuit protection and over temperature
- protection and the power supply under voltage
- protection function are built in
- Short circuit protection and over temperature
- protection state are outputted
- The lower arm emitter terminal has been
- independent by each phase for the purpose of
- the current detection at time of vector control
- Low thermal resistance by adoption of original
- high thermal conduction resin
- Since this product is MOS structure, it should be
- careful of static electricity i the case of handling
Aplications
- Semiconductors High Power Equipment Repair
MIG20J503H
Références spécifiques
- MPN
- MIG20J503H
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