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2SB507

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Datasheet2SB507

3A/60V/1U

No identificado

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Out-of-Stock

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  Política de entrega

(Delivery 1-2 days for products in stock)

Features

  • Silicon PNP Power Transistor
  • Low Collector-Emitter Saturation Voltage
  • VCE(sat)= 1.o V (max.) @ IC=2.0 A, IB=0.2A
  • DC Current Gain
  • hfe=40-320 @ IC=1.0A
  • Complementary to NPN 2SD313

Aplications

  • Semiconductors High Power Equipment Repair
2SB507

Specific References

MPN
2SB507
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