MIG10J503H

• INTELLIGENT POWER MODULE
• Features
• The 4th generation trench gate thin wafer
• NPT IGBT is adopted
• FRD is built in
• The level shift circuit by high-voltage IC
• built in
• The simplification of a high side driver power
• supply is possible by the bootstrap system
• Short Circuit Protection, Over Temperature
• protection and the Power Supply Under Voltage
• Protection function are built in
• Short Circuit protection and Over Temperature
• Protection state are outputted
• The lower arm emitter terminal has been
• independent by each phase for the purpose of
• the current detection at the time of vector control
• Low thermal resistance by adoption of original
• high thermal conduction resin
• Since this product is MOS structure, it should be
• careful of static electricity in the case of handling

Marca:

No identificado

Características electricas: 10A/500V/6U

Toshiba * Intelligent Power Module (IPM)