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MG150J2YS50

$73.64
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MODULOS IGBT DE CANAL N MODULOS IGBT DE CANAL N

PDF MG150J2YS50

Características Eléctricas: 150A/600V/2U

Marca: No identificado

Quantity
Out-of-Stock

  Política de seguridad

(Our products have limited warranty, please check our terms)

  Política de entrega

(Delivery 1-2 days for products in stock)

FeaturesAplicaciones
  • SILICON N CHANNEL IGBT MODULE
  • Features
  • The Electrodes are Isolated from case
  • High input impedance
  • Includes a complete half bridge in
  • one package
  • Enhancement-mode
  • High speed :
  • tf=0.30us (Max.) (IC = 150A)
  • trr = 0.15us (Max.) (IC = 150A)
  • Low saturation voltage :
  • VCE(sat) = 2.70V (Max.) (IC = 150A)
  • Applications
  • High Power Switching
  • Motor Control

Marca:

No identificado

Características electricas: 150A/600V/2U

Toshiba * Transistor

Type : IGBT 150A 600V DUAL
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MG150J2YS50

Specific References

MPN
MG150J2YS50