SKM400GB123D
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SKM400GB123D

$162.75
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4 Items

MODULOS THYRISTOR THYRISTOR

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DatasheetSKM400GB123D

300A/1200V/2U

No identificado

Quantity

  Política de seguridad

(Our products have limited warranty, please check our terms)

  Política de entrega

(Delivery 1-2 days for products in stock)

Features

  • IGBT MODULE
  • MOS input (voltage controlled)
  • N channel, homogeneous Si
  • Low inductance case
  • Very low tail current with low temperature dependence
  • High short circuit capability, self limiting to 6 x Icnom
  • Latch-up free
  • Fast & soft inverse CAL diodes
  • Isolated copper baseplate using DBC Direct copper Bonding Technology
  • Large clearance ( 12 mm ) and creepage distances ( 20 mm )

Aplications

  • Applications
  • Switching ( not for linear use )

Semikron IGBTs

Semikron

SKM400GB123D

IGBT 400A 1200V DUAL ; Type; Dual

Vces; 1200 Volts DC

Ic; 330 Amps

Vges +/-; 20

Ices Max; 0.3 MilliAmps

Vge(th) Min/Max; 4.5~6.5 Volts

Vce(sat) Max; 3 Volts

Height (mm); 30.5

Width (mm); 106.4

Depth (mm); 61.4

RoHS; Yes ;

SKM400GB123D

Specific References

MPN
SKM400GB123D
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