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SKM200GB124D

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DatasheetSKM200GB124D

200A/1200V/2U

No identificado

Quantity
Out-of-Stock

  Política de seguridad

(Our products have limited warranty, please check our terms)

  Política de entrega

(Delivery 1-2 days for products in stock)

Features

  • Low Loss IGBT MODULE
  • MOS input (voltage controlled)
  • N channel, homogeneous Silicon structure NPT-IGBT (Non punch through)
  • Low saturation voltage
  • Low inductance case
  • Low tail current with low temperature
  • dependence
  • High short circuit capability, self
  • limiting to 6 Icnom
  • Latch-up free
  • Fast & soft inverse CAL diodes
  • Isolated copper baseplate using DCB
  • Direct Copper BondingTechnology
  • without hard mould
  • Large clearance (12mm) and creepage
  • distances (20mm)

Aplications

  • Applications
  • Switching ( not for linear use )
  • Inverters drive

Semikron IGBTs

Semikron

SKM200GB124D

IGBT 200A 1200V DUAL ; Type; Dual

Vces; 1200 Volts DC

Ic; 200 Amps

Vges +/-; 20

Ices Max; 0.3 MilliAmps

Vge(th) Min/Max; 4.5~6.5 Volts

Vce(sat) Max; 2.45 Volts

Height (mm); 30.5

Width (mm); 106.4

Depth (mm); 61.4

RoHS; Yes ;

SKM200GB124D

Specific References

MPN
SKM200GB124D
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