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SKM100GB123D

$65.75
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MODULOS THYRISTOR THYRISTOR

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DatasheetSKM100GB123D

100A/1200V/2U

No identificado

Quantity
Out-of-Stock

  Política de seguridad

(Our products have limited warranty, please check our terms)

  Política de entrega

(Delivery 1-2 days for products in stock)

Features

  • IGBT MODULE
  • MOS input (voltage controlled)
  • N channel, homogeneous Si
  • Low inductance case
  • Very low tail current with low temperature dependence
  • High short circuit capability, self limiting to 6 Icnom
  • Latch-up free
  • Fast & soft inverse CAL diodes
  • Isolated copper baseplate using DCB Direct Copper Bonding Technology
  • Large clearance ( 9 mm ) and creepage distances ( 13 mm )

Aplications

  • Applications
  • Switching (not for linear use)

Semikron IGBTs

Semikron

SKM100GB123D

IGBT 100A 1200V DUAL ; Type; Dual

Vces; 1200 Volts DC

Ic; 90 Amps

Vges +/-; 20

Ices Max; 0.3 MilliAmps

Vge(th) Min/Max; 4.5~6.5 Volts

Vce(sat) Max; 3 Volts

Height (mm); 30.5

Width (mm); 94

Depth (mm); 34

RoHS; Yes ;

SKM100GB123D

Specific References

MPN
SKM100GB123D
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