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FS10ASJ-06

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DatasheetFS10ASJ-06

10A/60V/1U

No identificado

Quantity
Out-of-Stock

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  Política de entrega

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Features

  • High-Speed Switching N Channel MOS FET
  • Drive voltage : 4 V
  • VDSS : 60 V
  • IDS(ON) (max) : 70mOhms
  • Recovery Time of the Integrated Fast Recovery Diode (TYP) : 30 ns

Aplications

  • Semiconductors High Power Equipment Repair
FS10ASJ-06

Specific References

MPN
FS10ASJ-06
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