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MG75Q2YS50

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MODULOS IGBT DE CANAL N

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DatasheetMG75Q2YS50

75A/1200V/2U

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Out-of-Stock

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  Política de entrega

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Features

  • SILICON N CHANNEL IGBT MODULE
  • High input impedance
  • High speed :
  • tf = 0.3us (Max.) @ Inductive load
  • Low saturation voltage :
  • VCE(sat) = 3.6 V (Max.)
  • Enhancement-mode
  • Includes a complete half bridge in
  • one package
  • The electrodes are Isolated
  • from case

Aplications

  • Applications
  • High Power Switching
  • Motor Control

Toshiba * Transistor

Toshiba

MG75Q2YS50

IGBT 75A 1200V DUAL

MG75Q2YS50

Specific References

MPN
MG75Q2YS50
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