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MG50Q1BS11

$47.25
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MODULOS IGBT DE CANAL N

Última actualización

DatasheetMG50Q1BS11

50A/600V/1U

No identificado

Quantity
Out-of-Stock

  Política de seguridad

(Our products have limited warranty, please check our terms)

  Política de entrega

(Delivery 1-2 days for products in stock)

Features

  • SILICON N CHANNEL IGBT MODULE
  • The Electrodes are Isolated from Case
  • High Input Impedance
  • Enhancement -Mode
  • High Speed :
  • tf=1.0us (Max.) (IC = 50A)
  • Low Saturation Voltage :
  • VCE(sat)= 2.70V (Max.) (IC = 50A)

Aplications

  • Applications
  • High Power Switching
  • Motor Control

Toshiba * Transistor

Toshiba

MG50Q1BS11

IGBT 50A 1200V SINGLE

MG50Q1BS11

Specific References

MPN
MG50Q1BS11
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