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MG50H1BS1

$39.45
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MODULO DE POTENCIA MOSFET

Última actualización

DatasheetMG50H1BS1

50A/500V/1U

No identificado

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Out-of-Stock

  Política de seguridad

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  Política de entrega

(Delivery 1-2 days for products in stock)

Features

  • SILICON N CHANNEL IGBT MODULE
  • High Input Impedance
  • High Speed : tf = 1.0 us (Max.)
  • Low Saturation Voltage : VCE(sat) = 5.0 V (Max.)
  • Enhancement-Mode
  • The Electrodes are Isolated from Case

Aplications

  • Applications
  • HIGH POWER SWITCHING
  • MOTOR CONTROL

Toshiba * Transistor

Toshiba

MG50H1BS1

IGBT 50A 500V SINGLE

MG50H1BS1

Specific References

MPN
MG50H1BS1
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