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MG300Q1US1

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MODULOS IGBT DE CANAL N

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DatasheetMG300Q1US1

300A/1200V/1U

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Out-of-Stock

  Política de seguridad

(Our products have limited warranty, please check our terms)

  Política de entrega

(Delivery 1-2 days for products in stock)

Features

  • SILICON N CHANNEL IGBT MODULE
  • High input impedance
  • High speed :
  • tf= 1.0us (Max.) trr=0.5us (Max.)
  • Low saturation voltage :
  • VCE(sat) = 2.7V (Max.)
  • Enhancement mode
  • The electrodes are isolated from case

Aplications

  • Applications
  • High Power Switching
  • Motor Control

Toshiba * Transistor

Toshiba

MG300Q1US1

IGBT 300A 1200V SINGLE

MG300Q1US1

Specific References

MPN
MG300Q1US1
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