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MG200N1US1
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  • MG200N1US1

MG200N1US1

$105.00
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SCR - THYRISTOR CONTROL DE FASE

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DatasheetMG200N1US1

200A/1000V/1U

No identificado

Quantity
Out-of-Stock

  Política de seguridad

(Our products have limited warranty, please check our terms)

  Política de entrega

(Delivery 1-2 days for products in stock)

Features

  • SILICON N CHANNEL IGBT MODULE
  • High Input Impedance
  • High Speed : tf=1.0 us (Max.) trr=0.5us(Max.)
  • Low Saturation Voltage : VCE(sat)=5.0 V (Max.)
  • Enhancement-Mode
  • The Electrodes are Isolated from Case

Aplications

  • Aplications
  • High Powewr Switching
  • Motor Control
MG200N1US1

Specific References

MPN
MG200N1US1
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