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MG200J2YS50

$73.64
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MODULOS IGBT DE CANAL N

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DatasheetMG200J2YS50

200A/600V/2U

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Out-of-Stock

  Política de seguridad

(Our products have limited warranty, please check our terms)

  Política de entrega

(Delivery 1-2 days for products in stock)

Features

  • SILICON N CHANNEL IGBT MODULE
  • The Electrodes are Isolated from Case
  • High Input Impedance
  • Includes a Complete Half Bridge in
  • One Package
  • Enhancement-Mode
  • High Speed :
  • tf=0.30us (Max.) (IC = 200A)
  • trr=0.15us (Max.) (IF = 200A)
  • Low Saturation Voltage :
  • VCE(sat)=2.70V (Max.) (IC =200A)

Aplications

  • Applications
  • High Power Switching
  • Motor Control

Toshiba * Transistor

Toshiba

MG200J2YS50

IGBT 200A 600V DUAL

MG200J2YS50

Specific References

MPN
MG200J2YS50
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