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MG150J1BS11

$47.34
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MODULO THYRISTOR DIODO

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DatasheetMG150J1BS11

150A/600V/1U

No identificado

Quantity
Out-of-Stock

  Política de seguridad

(Our products have limited warranty, please check our terms)

  Política de entrega

(Delivery 1-2 days for products in stock)

Features

  • SILICON N CHANNEL IGBT MODULE
  • High Input Impedance
  • High Speed :
  • tf=1.0us (Max.) (IC=150A)
  • Low Saturation Voltage :
  • VCE(sat)=2.7V (Max.) (IC=150A)
  • Enhancement-Mode
  • The Electrodes are Isolated from Case

Aplications

  • Applications
  • High Power Switching
  • Motor Control

Toshiba * Transistor

Toshiba

MG150J1BS11

IGBT 150A 600V SINGLE

MG150J1BS11

Specific References

MPN
MG150J1BS11
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