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MG100J6ES50
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  • MG100J6ES50

MG100J6ES50

$84.00
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DatasheetMG100J6ES50

100A/600V/6U

No identificado

Quantity
Out-of-Stock

  Política de seguridad

(Our products have limited warranty, please check our terms)

  Política de entrega

(Delivery 1-2 days for products in stock)

Features

  • SILICON N CHANNEL IGBT MODULE
  • The electrodes are isolated from case
  • High input impedance
  • 6 IGBTs built into 1 package
  • Enhancement-mode
  • High speed tf=0.30us (Max) (IC=100A)
  • trr = 0.15us (Max) (IF=100A)
  • Low saturation voltage : VCE(sat) = 2.70V (Max) (IC = 100A)

Aplications

  • Applications
  • High Power Switching
  • Motor Control
MG100J6ES50

Specific References

MPN
MG100J6ES50
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