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MG25N2YS1

$102.38
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IGBT - IPM

Última actualización

DatasheetMG25N2YS1

25A/1000V/2U

No identificado

Quantity
Out-of-Stock

  Política de seguridad

(Our products have limited warranty, please check our terms)

  Política de entrega

(Delivery 1-2 days for products in stock)

Features

  • SILICON N CHANNEL IGBT
  • High Input Impedance
  • High Speed : tf=1.0us(Max.)
  • trr=0.5us(Max.)
  • Low Saturation Voltage : VCE(sat)=5.0V (Max.)
  • Enhancement-Mode
  • Includes a Complete Half Bridge in one Package
  • The Electrodes are Isolated from Case.

Aplications

  • Applications
  • High Power Switching
  • Motor Control
MG25N2YS1

Specific References

MPN
MG25N2YS1
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