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GT60M323

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PDF GT60M323

Características Eléctricas: 31A/900V/1U

Marca: No identificado

Quantity
Out-of-Stock

  Política de seguridad

(Our products have limited warranty, please check our terms)

  Política de entrega

(Delivery 1-2 days for products in stock)

FeaturesAplicaciones
  • SILICON N CHANNEL IGBT
  • Fearures
  • Enhancement-Mode type
  • High Speed : tf=0.09us (typ.) (Ic=60A)
  • Low Saturation Voltage : VCE(sat) = 2.3V (typ.) (Ic = 60A)
  • FRD included between Emitter and Collector
  • TO-3P(LH) (Toshiba package name)

Marca:

No identificado

Características electricas: 31A/900V/1U

Toshiba Semiconductor

Type : Semiconductor
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GT60M323

Specific References

MPN
GT60M323
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