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SKM100GB125DN
120,75 $
steuerfrei
MODULOS THYRISTOR THYRISTOR
Última actualización
SKM100GB125DN100A/1200V/2U
No identificado
Política de seguridad
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Política de entrega
(Envíos de 1-2 días hábiles para productos de stock)
Features
- Ultra Fast IGBT MODULE
- N channel, homogeneous Si
- Low inductance case
- Short tail current with low temperature dependence
- High short circuit capability, self limiting to 6 x Icnom
- Fast & soft inverse CAL diodes
- Isolated copper baseplate using DCB Direct Copper Bonding Technology
- Large clearance ( 10 mm ) and creepage distances ( 20 mm )
Aplications
- Applications
- Switched mode power supplies
- at fSW > 20 kHz
- Resonat inverters up to 100 kHz
- Inductive heating
- Electronic welders at fSW > 20 kHz
Semikron IGBTs
Semikron
SKM100GB125DN
IGBT 100A 1200V DUAL ; Type; Dual
Vces; 1200 Volts DC
Ic; 80 Amps
Vges +/-; 20
Ices Max; 0.45 MilliAmps
Vge(th) Min/Max; 4.5~6.5 Volts
Vce(sat) Max; 3.85 Volts
Height (mm); 30.5
Width (mm); 94.5
Depth (mm); 34.5
RoHS; Yes ;
SKM100GB125DN
Besondere Bestellnummern
- Hersteller-Teilenummer (MPN)
- SKM100GB125DN
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MODULOS THYRISTOR THYRISTOR
Última actualización
100A/1200V/2U
No identificado