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SKM100GB124D

78,75 $
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MODULOS THYRISTOR THYRISTOR

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DatasheetSKM100GB124D

100A/1200V/2U

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Features

  • Low Loss IGBT MODULE
  • MOS input (voltage controlled)
  • N channel, homogeneous Silicon
  • structure (NPT-Non punch-through IGBT )
  • Low loss high density chip
  • Low tail current
  • High short circuit capability, self limiting to 6 x Icnom
  • Latch-up free
  • Fast & soft inverse CAL diodes
  • Isolated copper baseplate using DCB Direct Copper Bonding Technology
  • Large clearance ( 10 mm ) and creepage distances ( 20 mm )

Aplications

  • Applications
  • Switching (not for linear use)

Semikron IGBT

Semikron

SKM100GB124D

IGBT 100A 1200V DUAL

SKM100GB124D

Besondere Bestellnummern

Hersteller-Teilenummer (MPN)
SKM100GB124D
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