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SKM200GB123D

$ 107,63
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MODULOS THYRISTOR THYRISTOR

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DatasheetSKM200GB123D

200A/1200V/2U

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Quantidade
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Features

  • TRENCH IGBT MODULE
  • MOS input (voltage controlled)
  • N channel, homogeneous Si
  • Low inductance case
  • Very low tail current with low temperature dependence
  • High short circuit capability, self limiting to 6 x Icnom
  • Latch-up free
  • Fast & soft inverse CAL diodes
  • DCB Direct Copper Bonding Technology
  • Large clearance (13 mm) and creepage distances (20 mm)

Aplications

  • Applications
  • Switching (not for linear use)

Semikron IGBTs

Semikron

SKM200GB123D

IGBT 200A 1200V DUAL ; Type; Dual

Vces; 1200 Volts DC

Ic; 180 Amps

Vges +/-; 20

Ices Max; 0.3 MilliAmps

Vge(th) Min/Max; 4.5~6.5 Volts

Vce(sat) Max; 3 Volts

Height (mm); 30.5

Width (mm); 106.4

Depth (mm); 61.4

RoHS; Yes ;

SKM200GB123D

Referências específicas

MPN
SKM200GB123D
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