SKM100GB125DN
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SKM100GB125DN

$ 120,75
Sem imposto
4 Itens

MODULOS THYRISTOR THYRISTOR

Última actualización

DatasheetSKM100GB125DN

100A/1200V/2U

No identificado

Quantidade

  Política de seguridad

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  Política de entrega

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Features

  • Ultra Fast IGBT MODULE
  • N channel, homogeneous Si
  • Low inductance case
  • Short tail current with low temperature dependence
  • High short circuit capability, self limiting to 6 x Icnom
  • Fast & soft inverse CAL diodes
  • Isolated copper baseplate using DCB Direct Copper Bonding Technology
  • Large clearance ( 10 mm ) and creepage distances ( 20 mm )

Aplications

  • Applications
  • Switched mode power supplies
  • at fSW > 20 kHz
  • Resonat inverters up to 100 kHz
  • Inductive heating
  • Electronic welders at fSW > 20 kHz

Semikron IGBTs

Semikron

SKM100GB125DN

IGBT 100A 1200V DUAL ; Type; Dual

Vces; 1200 Volts DC

Ic; 80 Amps

Vges +/-; 20

Ices Max; 0.45 MilliAmps

Vge(th) Min/Max; 4.5~6.5 Volts

Vce(sat) Max; 3.85 Volts

Height (mm); 30.5

Width (mm); 94.5

Depth (mm); 34.5

RoHS; Yes ;

SKM100GB125DN

Referências específicas

MPN
SKM100GB125DN
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